MTB110P10J3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C968J3
Issued Date : 2014.08.07
Revised Date :
Page No. : 6/9
Typical Characteristics (Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
50
5000
45 VDS=-10V
4500
40
4000
TJ(MAX)=175°C
35
3500
TC=25°C
θ JC=3°C/W
30
3000
25
2500
20
2000
15
1500
10
1000
5
500
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=3°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB110P10J3
CYStek Product Specification