MTN8N70FP Datasheet, PDF (5/11 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C727FP
Issued Date : 2009.06.23
Revised Date : 2012.10.08
Page No. : 5/11
10000
Capacitance vs Reverse Voltage
f=1MHz
Ciss
Brekdown Voltage vs Ambient Temperature
800
1000
750
Coss
100
Crss
10
0
5
10 15 20
25 30
Drain-to-Source Voltage-VDS(V)
Maximum Safe Operating Area
100
10μs
10
100^μs
1
Operation in this area is
limited by RDS(ON)
0.1
Single pulse
Tc=25°C; Tj=150°C
0.01
1
10
100
Drain-Source Voltage -VDS(V)
1ms
10ms
100ms
DC
1000
Maximum Drain Current vs Case Temperature
9
8
7
6
5
4
3
2
1
0
25
50
75 100 125 150 175
Case Temperature---TC(°C)
700
650
-100
ID=250μA,
VGS=0V
-50
0
50
100 150 200
Ambient Temperature-Tj(°C)
Gate Charge Characteristics
12
VDS=130
10
VDS=325V
8
VDS=520V
6
4
2
ID=7.5A
0
0
5 10 15 20 25 30 35
Total Gate Charge---Qg(nC)
MTN8N70FP
CYStek Product Specification