MTN6N65FP Datasheet, PDF (5/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C597FP
Issued Date : 2010.01.28
Revised Date :2012.01.13
Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Brekdown Voltage vs Ambient Temperature
800
Ciss
1000
100
Coss
f=1MHz
Crss
10
0
5
10
15 20
25 30
Drain-to-Source Voltage-VDS(V)
Maximum Safe Operating Area
100
10μs
10
100μs
1ms
10ms
1
DC
100ms
Operation in this area is
limited by RDS(ON)
0.1
0.01
1
10
100
1000
Drain-Source Voltage -VDS(V)
Maximum Drain Current vs Case Temperature
7
6
5
4
3
2
1
0
25 50 75 100 125 150 175
Case Temperature---TC(°C)
750
700
650
ID=250μA,
VGS=0V
600
-100 -50
0
50
100 150 200
Ambient Temperature-Tj(°C)
Gate Charge Characteristics
12
VDS=120V
10
VDS=300V
8
VDS=520V
6
4
2
ID=6A
0
0 2 4 6 8 10 12 14 16 18 20
Total Gate Charge---Qg(nC)
MTN6N65FP
CYStek Product Specification