MTN12N60CFP Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C130FP
Issued Date : 2016.03.15
Revised Date :
Page No. : 5/9
Typical Characteristics (Cont.)
Capacitance vs Reverse Voltage
10000
f=1MHz
Ciss
Brekdown Voltage vs Ambient Temperature
1.2
1.1
1000
1
Coss
0.9
100
10
0
Crss
5
10
15
20
25
30
VSD, Drain-to-Source Voltage(V)
0.8
0.7
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
T j, Junction T emperature(°C)
Maximum Safe Operating Area
100
10_μs
10
1 _{Operation in this area is}
limited by RDS(ON)
0.1
Tc=25°C, Tj=150°C,VGS=10V
RθJC=2°C/W, Single pulse
100_μs
1ms
10ms
100ms
DC
0.01
1
10
100
1000
VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
14
12
10
8
6
4
2
VGS=10V, RθJC=2°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
Gate Charge Characteristics
10
VDS=160V
8
VDS=300V
6
VDS=480V
4
2
ID=12A
0
0 8 16 24 32 40 48 56 64 72 80
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-65 -35
-5 25 55 85 115 145 175
Tj, Junction Temperature(°C)
MTN12N60CFP
CYStek Product Specification