MTN10N40E3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C586E3
Issued Date : 2011.04.18
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
f=1MHz
Ciss
1000
Brekdown Voltage vs Ambient Temperature
550
500
Coss
100
Crss
10
0
5
10 15 20
25 30
Drain-to-Source Voltage-VDS(V)
Maximum Safe Operating Area
100
10μs
100^μs
10
1ms
10ms
100ms
1
Operation in this area is
DC
limited by RDS(ON)
0.1
Single pulse
Tc=25°C; Tj=150°C
0.01
1
10
100
1000
Drain-Source Voltage -VDS(V)
Maximum Drain Current vs Case Temperature
12
10
8
6
4
2
0
25 50 75 100 125 150 175
Case Temperature---TC(°C)
450
ID=250μA,
VGS=0V
400
-100 -50
0
50
100 150 200
Ambient Temperature-Tj(°C)
Gate Charge Characteristics
12
VDS=90V
10
VDS=200V
8
VDS=320V
6
4
2
ID=10A
0
0 5 10 15 20 25 30 35 40
Total Gate Charge---Qg(nC)
MTN10N40E3
CYStek Product Specification