MTE2D0N04E3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C072E3
Issued Date : 2016.03.04
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
1000
C _oss
0.8
0.6
Crss
0.4
ID=250μA
100
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
ID, Drain Current(A)
8
VDS=20V
6
VDS=32V
4
2
ID=84A
0
0 20 40 60 80 100 120 140
Total Gate Charge---Qg(nC)
1000
100
RDS(ON)
Limited
Maximum Safe Operating Area
10μs
100μs
10
1
TC=25°C, Tj=175°C,
VGS=10V, RθJC=0.9°C/W
Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
DC
100
Maximum Drain Current vs Case Temperature
200
180
Silicon Limit
160
140
120
100
80
Package Limit
60
40
20
VGS=10V, RθJC=0.9°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE2D0N04E3
CYStek Product Specification