MTE030N10QH8 Datasheet, PDF (5/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C168H8
Issued Date : 2017.03.08
Revised Date :
Page No. : 5/ 10
Typical Characteristics
Typical Output Characteristics
50
10V
45 _9V
40 8V
7V
6.5V
35
6V
30
25
5.5V
20
5V
15
10
4.5V
5
VGS=4V
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
1
VGS=6V
0.8
Tj=25°C
0.6
VGS=7V
VGS=10V
0.4
Tj=150°C
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=20A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=10V, ID=20A
2
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C :25.4mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTE030N10QH8
CYStek Product Specification