MTD120C10KJ4 Datasheet, PDF (5/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C945J4
Issued Date : 2014.02.12
Revised Date :
Page No. : 5/13
Q1, N-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
1.4
Threshold Voltage vs Junction Tempearture
Ciss
1.2
1
100
C _oss
0.8
ID=1mA
Crss
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=80V
8
VDS=50V
6
4
2
ID=2A
0
0
2
4
6
8
10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2.5
10 _RDS(ON)
Limit
100μs
1
1ms
10ms
0.1
100ms
TA=25°C, Tj=175°C, VGS=10V
1s
RθJA=90°C/W,Single Pulse
DC
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
2
1.5
1
0.5
TA=25°C, VGS=10V
RθJA=90°C/W
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
MTD120C10KJ4
CYStek Product Specification