MTD07N04FP Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C140FP
Issued Date : 2015.12.31
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
100
Crss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
10
0
100
10
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
VDS=10V
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
1
VDS=15V
4
0.1
Ta=25°C
Pulsed
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
RDSON
Limited
100
10
1 ^{TC=25°C, Tj=150°C}
DC
VGS=10V, RθJC=3.8°C/W
Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100
VDS=32V
2
ID=53A
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
70
60
50
40
30
20
10 VGS=10V, RθJC=3.8°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTD07N04FP
CYStek Product Specification