MTB4D0N03ATV8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
ID=1mA
0.8
100
Crss
0.6
ID=250μA
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
RDSON
100 Limite
10
1
TA=25°C, Tj=150°C
0.1
VGS=10V, RθJA=50°C/W
Single Pulse
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=10V
6
VDS=5V
4
2
ID=15A
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
18
16
14
12
10
8
6
4
2 ^{TA=25°C, VGS=10V, RθJA=50°C/W}
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB4D0N03ATV8
CYStek Product Specification