MTB3D0N03BQ8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999Q8
Issued Date : 2015.10.20
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
1.2
1
C _oss
0.8
ID=1mA
Crss
100
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
VDS=15V
1
0.1
0.01
0.001
1000
Pulsed
Ta=25°C
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
ID=18A
6
4
2
0
0
10
20
30
40
50 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
25
100
RDS(ON)
Limit
10
1
TA=25°C, Tj(max)=150°C
0.1 V_GS=10V, Rθ_JA=40°C/W
Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
20
15
10
5 _{TA=25°C, VGS=10V, Tj(max)=150°C}
RθJA=40°C/W, single pulse
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB3D0N03BQ8
CYStek Product Specification