MTB20A06KQ8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C103Q8
Issued Date : 2016.05.19
Revised Date : 2016.05.20
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1000
C _oss
100
Crss
f=1MHz
10
0
5
10 15 20 25 30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
ID, Drain Current(A)
8
VDS=30V
VDS=15V
6
4
VDS=48V
2
ID=6.3A
0
0 2 4 6 8 10 12 14 16 18 20
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 ^Limited
100μs
1
1ms
10ms
0.1
TA=25°C, Tj=150°C
VGS=10V,RθJA=78°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
8
7
6
5
4
3
2
1 ^{TA=25°C,RθJA=78°C/W,VGS=10V}
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTB20A06KQ8
CYStek Product Specification