MTB15P04J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C877J3
Issued Date : 2012.09.26
Revised Date : 2013.12.30
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=-250μA
1.2
1000
C _oss
Crss
100
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=-5V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
-ID, Drain Current(A)
Maximum Safe Operating Area
1000
100 ^RDS(ON)
Limit
10
1
TC=25°C, Tj=150°, VGS=-10V
0.1
RθJC=1.8°C/W, Single Pulse
0.01
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
DC
100
1
0.8
0.6
0.4
-60
10
8
6
4
-20
20
60
100 140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
VDS=-15V
VDS=-10V
VDS=-20V
2
ID=-25A
0
0
8
16
24
32
40
48
Qg, Total Gate Charge(nC)
Maximum Drain Current vs CaseTemperature
70
60
50
40
30
Limited by package
20
10
VGS=-10V, RθJC=1.8°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB15P04J3
CYStek Product Specification