MTB020N03E3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C737E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
100
C _oss
0.8
Crss
0.6
10
0
10
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
1
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
ID=20A
6
0.1
0.01
0.001
1000
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
1
TC=25°C, VGS=10V
RθJC=2.2°C/W, Tj(max)=150°C
Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
DC
100
4
2
0
0
2
4
6
8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB020N03E3
CYStek Product Specification