MTA7D0N01H8 Datasheet, PDF (5/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C131H8
Issued Date : 2016.07.19
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
100
0
Crss
12 34567 8
VDS, Drain-Source Voltage(V)
9 10
Forward Transfer Admittance vs Drain Current
100
Threshold Voltage vs Junction Tempearture
1.8
1.6
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=5V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
100
RDS(ON)
Limited
10
100μs
1ms
10ms
1
TA=25°C, Tj=150°C, VGS=4.5V
RθJA=50°C/W, Single Pulse
0.1
100ms
1s
DC
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
8
6
4
2
VDS=15V
ID=11A
0
0
4
8
12 16
20 24
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
20
18
16
14
12
10
8
6
4
TA=25°C, Tj=150°C, VGS=4.5V
2
RθJA=50°C/W, single pulse
0
25 50 75 100 125 150 175
Tj, Junctione Temperature(°C)
MTA7D0N01H8
CYStek Product Specification