MTA17A02CDV8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – DFN3×3

CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
1.2
Ciss
1
ID=1mA
100
C _oss
0.8
10
0.1
Crss
1
10
VDS, Drain-Source Voltage(V)
0.6
ID=250μA
0.4
100
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
VDS=5V
10
1
0.1
0.01
0.001
VDS=10V
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
Gate Charge Characteristics
5
VDS=16V
4
ID=6A
3
2
1
0
0 12 3 45 67 8
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDSON
Limited
10
100μs
1ms
10ms
1
100ms
1s
0.1 ^{TA=25°C, Tj=150°C}
DC
VGS=4.5V, RθJA=50°C/W
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
MTA17A02CDV8
Maximum Drain Current vs Junction Temperature
8
7
6
5
4
3
2
1
TA=25°C, VGS=4.5V, RθJA=50°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification