MTA17A02CDN6 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – MTA17A02CDN6 CYStek Product Specification

CYStech Electronics Corp.
Spec. No. : C930N6
Issued Date : 2013.11.06
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
ID=250μA
1.2
100
C _oss
1
0.8
Crss
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=5V
10
1
VDS=10V
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=16V
8
ID=6A
6
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
2
0
0
4
8
12
16
20
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
100
10
RDS(ON) Limit
1
0.1
TA=25°C, Tj(max)=150°C,
0.01
VGS=4.5V, RθJA=100°C/W
Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Junction Temperature
7
6
5
4
3
2
1
TA=25°C, VGS=4.5V, RθJA=100°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTA17A02CDN6
CYStek Product Specification