MTP4835V8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 4/9
Typical Characteristics
80
70
60
50
40
30
20
10
0
0
Typical Output Characteristics
10V,9V, 8V, 7V, 6V, 5V
-VGS=2V
4V
3V
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-2.5V
100
VGS=-4.5V VGS=-10V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
-60
ID=-250μA,
VGS=0V
-20 20
60 100 140 180
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=-10A
140
120
100
80
60
40
20
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
5
10
15
20
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.6
VGS=-10V, ID=-10A
1.2
0.8
0.4
0
-60
RDS(ON)@Tj=25°C : 16mΩ
-20
20
60 100 140 180
Tj, Junction Temperature(°C)
MTP4835V8
CYStek Product Specification