MTN4N60AE3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C408E3-A
Issued Date : 2011.01.19
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
8
Static Drain-Source On-resistance vs Ambient Temperature
6
6
15V
10V
9V
6V
7V
4
5.5V
2
5V
VGS=4.5V
0
0
10
20
30
40
50
60
Drain-Source Voltage -VDS(V)
Static Drain-Source On-State resistance vs Drain Current
6
VGS=10V
4
2
0.1
1
10
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
Ta=25°C
ID=2A
15
10
5
5
4
3
2
1
-100
ID=2A,
VGS=10V
-50
0
50
100
150
Ambient Temperature-Ta(°C)
Drain Current vs Gate-Source Voltage
6
Ta=25°C
5
VDS=30V
4
3
VDS=10V
2
1
0
0
5
10
15
20
Gate-Source Voltage-VGS(V)
Body Diode Forward Voltage Variation vs Source
Current and Temperature
100
VGS=0V
10
Ta=150°C
1
Ta=25°C
0
0
2
4
6
8
10 12
Gate-Source Voltage-VGS(V)
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Source Drain Voltage -VSD(V)
MTN4N60AE3
CYStek Product Specification