MTN3207E3 Datasheet, PDF (4/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C578E3
Issued Date : 2011.10.17
Revised Date : 2011.10.20
Page No. : 4/10
Typical Characteristics
Typical Output Characteristics
300
10V
9V
250
8V
VGS=7V
200
150
VGS=6V
100
50
VGS=5V
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=10V
100
Brekdown Voltage vs Ambient Temperature
100
90
80
70
ID=250μA,
VGS=0V
60
-100 -50
0
50 100 150 200
Tj, Junction Temperature(°C)
Typical Transfer Characteristics
250
VDS=10V
200
150
100
10
50
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
80
ID=40A
60
0
0
2
4
6
8
10 12
VGS, Gate-Source Voltage(V)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
40
0.6
Tj=150°C
20
0.4
0
0.2
2
4
6
8
10
0
VGS, Gate-Source Voltage(V)
5
10
15
20
IS, Source Drain Current(A)
MTN3207E3
CYStek Product Specification