MTE1D5N04H8 Datasheet, PDF (4/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C054H8
Issued Date : 2017.07.20
Revised Date :
Page No. : 4/10
Typical Characteristics
Typical Output Characteristics
300
10V, 9V, 8V, 7V,6.5V
250
6V
200
5.5V
150
100
5V
50
0
0
VGS=4.5V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=6V
1
7V
10V
0.8
Tj=25°C
10
0.6
Tj=150°C
0.4
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
5
4
ID=100A
3
2
ID=50A
1
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
10
20
30
40
50
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3.2
2.8
VGS=10V, ID=100A
2.4
2
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C :1.5mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTE1D5N04H8
CYStek Product Specification