MTD070P15J3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C985J3
Issued Date : 2015.12.07
Revised Date : 2016.02.02
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
80
70
10V,9V,8V,7V,6V
60
5V
50
40
4.5V
30
4V
20
-VGS=3V
3.5V
10
0
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
90
80
70
60
50
40
In descending order
30
VGS= -4.5V
-10V
20
10
0
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
900
ID=-5.2A
800
700
600
500
400
300
200
100
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
0 2 4 6 8 10 12 14 16 18 20
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3
2.5
VGS=-10V, ID=-5.2A
2
1.5
1
0.5
RDS(ON)@Tj=25°C : 66mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTD070P15J3
CYStek Product Specification