MTB30N06J3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C699J3
Issued Date : 2012.05.16
Revised Date : 2013.12.26
Page No. : 4/ 8
Typical Characteristics
Typical Output Characteristics
50
10V,9V,8V,7V,6V,5V
45
40
35
30
25
20
VGS=4V
15
10
VGS=3V
5
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=2.5V
100
VGS=3V
VGS=4.5V
10
0.01
VGS=10V
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
ID=18A
160
120
80
40
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=10V, ID=18A
1.6
1.2
0.8
0.4
0
-60
RDS(ON)@Tj=25°C : 27 mΩ
-20 20
60 100 140 180
Tj, Junction Temperature(°C)
MTB30N06J3
CYStek Product Specification