MTB09P04DJ3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C877J3
Issued Date : 2014.12.25
Revised Date : 2014.12.26
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
200
10V,9V,8V,7V,6V,5V
160
-VGS=4V
120
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
80
-VGS=3V
40
-VGS=2V
-VGS=2.5V
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
90 ^{In descending order}
80
VGS=-2.5V
-3V
70
-4.5V
60
-10V
50
40
30
20
10
0
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
ID=-25A
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
0 2 4 6 8 10 12 14 16 18 20
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3
2.5
VGS=-10V, ID=-25A
2
1.5
1
0.5
RDS(ON)@Tj=25°C : 5.2mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB09P04DJ3
CYStek Product Specification