MTB090N06N3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – 60V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 4/9
Typical Characteristics
16
14
12
10
8
6
4
2
0
0
Typical Output Characteristics
10V,9V,8V,7V,6V,5V,4V
VGS=3V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=2.5V
Reverse Drain Current vs Source-Drain Voltage
1.2
1
Tj=25°C
100
10
0.001
VGS = 3V
4.5V
10V
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
240
200
ID=3A
160
120
80
40
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.8
0.6
Tj=150°C
0.4
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=3A
2
1.6
1.2
0.8
RDSON@Tj=25°C : 77mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB090N06N3
CYStek Product Specification