MTB050P10F3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
100
90
-10V
80
-9V
-8V
70
-7V
60
-6V
-5V
50
VGS=-4V
40
VGS=-3V
30
20
VGS=-2V
VGS=-2.5V
10
0
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-2V
VGS=-2.5V
VGS=-3V
VGS=-4.5V
VGS=-10V
100
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6
ID=-250μ A,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=-20A
140
120
100
80
60
40
20
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=-10V, ID=-20A
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 46mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB050P10F3
CYStek Product Specification