MTB028N10QNCQ8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C168Q8
Issued Date : 2016.11.18
Revised Date : 2016.11.22
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
30
25
10V,9V,8V,7V,6V,5V,4V
20
3.5V
15
10
5
VGS=3V
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
VGS=10V
10
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=4A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3.2
2.8
VGS=10V, ID=4A
RDS(ON)@Tj=25°C : 19.3mΩ typ.
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB028N10QNCQ8
CYStek Product Specification