HBNP54S6 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – General Purpose NPN / PNP Epitaxial Planar Transistors

CYStech Electronics Corp.
Q1, Typical Characteristics
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2015.09.03
Page No. : 4/9
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1000
100
Saturation Voltage vs Collector Current
VCESAT=10IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VCE=5V
10
0.1
1
10
Collector Current---IC(mA)
10000
1000
Saturation Voltage vs Collector Current
VCESAT=50IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
10
100
1
10
100
Collector Current---IC(mA)
10000
1000
On Voltage vs Collector Current
VBEON@VCE=6V
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
10
0.1
HBNP54S6
1
10
Collector Current---IC(mA)
100
100
1
10
100
Collector Current---IC(mA)
CYStek Product Specification