BTD142F3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :2011.10.03
Page No. : 4/7
Typical Characteristics(Cont.)
100000
Saturation Voltage vs Collector Current
VCESAT=1000IB
10000
On Voltage vs Collector Current
VCE=3V
75℃
25℃
10000
75℃
125℃
1000
1000
125℃
125℃
100
100
1000
1000
Collector Current---IC(mA)
Built-in Diode Characteristics
10000
100
100
1000
1000
Collector Current---IC(mA)
Capacitance vs Reverse-biased Voltage
10000
75℃
100
10
125℃
Cib
Cob
100
1
100
2.50
2.00
1.50
1.00
0.50
0.00
0
25℃
10
Forward Voltage---VF(mV)
1000
0.1
1
10
100
Reverse-biased Voltage---VR(V)
Power Derating Curve
50
100
150
Ambient Temperature---TA(℃)
70
60
50
40
30
20
10
0
200
0
Power Derating Curve
50
100
150
200
Case Temperature---TC(℃)
BTD142F3
CYStek Product Specification