MTS9539G6 Datasheet, PDF (3/13 Pages) Cystech Electonics Corp. – N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C094G6
Issued Date : 2015.10.27
Revised Date :
Page No. : 3/13
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
-30
VGS(th)
-1
IGSS
-
IDSS
-
-
-
*RDS(ON)
-
-
*GFS
-
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
-
-
-
-
-
43
53
56
3
619
76
61
14.2
21.2
45.8
24.2
6.4
1.9
1.8
-
-
-0.77
-
-2.5
±100
-1
-25
54
69
73
-
-
-
-
-
-
-
-
-
-
-
-1
-4
-1.2
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
nA VGS=±20V, VDS=0V
μA
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V, Tj=70°C
ID=-5A, VGS=-10V
mΩ ID=-3.7A, VGS=-4.5V
ID=-3A, VGS=-4V
S VDS=-10V, ID=-1A
pF VDS=-15V, VGS=0V, f=1MHz
ns
VDS=-10V, ID=-1A,
VGS=-4.5V, RG=6Ω, RD=10Ω
nC VDS=-10V, ID=-3.7A, VGS=-4.5V
A
V VGS=0V, IS=-1A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTS9539G6
CYStek Product Specification