MTN5N60E3 Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C408E3-A
Issued Date : 2010.09.08
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
600
∆BVDSS/∆Tj
-
VGS(th)
2.0
*GFS
-
IGSS
-
-
IDSS
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
*trr
-
*Qrr
-
-
-
V
VGS=0, ID=250μA, Tj=25℃
0.6
-
V/°C Reference to 25°C, ID=250μA
-
4.0
V
VDS = VGS, ID=250μA
3
-
S
VDS =15V, ID=2.25A
-
±100
nA
VGS=±30
-
1
μA VDS =600V, VGS =0
-
10
μA V_DS =480V, V_GS =0, Tj=125°C
2.1
2.5
Ω
VGS =10V, ID=2.25A
16
-
3.2
-
6.2
-
9.6
-
12.2
-
22.3
-
14.8
-
700
-
86
-
20
-
nC ID=4.5A, VDD=300V, VGS=10V
ns
VDD=300V, ID=4.5A, VGS=10V,
RG=10Ω
pF
VGS=0V, VDS=25V, f=1MHz
-
1.5
V
IS=4.5A, VGS=0V
-
4.5
A
-
18
320
2.7
-
-
ns
μC
VGS=0, IS=4.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN5N60E3
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Marking
5N60
MTN5N60E3
CYStek Product Specification