MTN4N70I3 Datasheet, PDF (3/11 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C797I3
Issued Date : 2010.03.29
Revised Date : 2011.11.10
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
700
∆BVDSS/∆Tj
-
VGS(th)
2.0
*GFS
-
IGSS
-
IDSS
-
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
*trr
-
*Qrr
-
-
-
V
VGS=0, ID=250μA, Tj=25℃
0.6
-
V/°C Reference to 25°C, ID=250μA
-
4.0
V
VDS = VGS, ID=250μA
2.3
-
S
VDS =15V, ID=2A
-
±100
nA
VGS=±30
-
1
μA VDS =650V, VGS =0
-
10
μA V_DS =520V, V_GS =0, T_C=125°C
3.0
3.5
Ω
VGS =10V, ID=2A
11
-
2.6
-
nC
ID=4A, VDD=520V, VGS=10V
4.6
-
15
-
33
30
-
-
ns
VDD=325V, ID=4A, VGS=10V,
RG=25Ω
37
-
568
-
51
-
pF
VGS=0V, VDS=25V, f=1MHz
9.6
-
-
1.5
V
IS=4A, VGS=0V
-
-
4
16
A
280
2
-
-
ns
μC
VGS=0, IF=4A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN4N70I3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
4N70
MTN4N70I3
CYStek Product Specification