MTN3N60FP Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 3/ 10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
600
∆BVDSS/∆Tj
-
VGS(th)
2.0
*GFS
-
IGSS
-
-
IDSS
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
-
V
VGS=0, ID=250μA, Tj=25℃
0.65
-
V/°C Reference to 25°C, ID=250μA
-
4.0
V
VDS = VGS, ID=250μA
1.8
-
S
VDS =15V, ID=1.5A
-
±100
nA
VGS=±30
-
-
1
10
μA
VDS =600V, VGS =0
VDS =480V, VGS =0, Tj=125°C
3.6
4.5
Ω
VGS =10V, ID=1.5A
11
-
2
-
nC
ID=3A, VDS=480V, VGS=10V
5
-
10
-
27
24
-
-
ns
VDS=300V, ID=3A, VGS=10V,
RG=25Ω
30
-
435
-
45
-
pF
VGS=0V, VDS=25V, f=1MHz
8
-
-
3
A
-
12
-
1.5
V
IS=3A, VGS=0V
250
1.6
-
-
ns
μC
VGS=0, IF=3A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN3N60FP
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTN3N60FP
CYStek Product Specification