MTN2N60DJ3 Datasheet, PDF (3/11 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C083J3
Issued Date : 2016.02.16
Revised Date :
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
600
∆BVDSS/∆Tj
-
VGS(th)
2.0
*GFS
-
IGSS
-
-
IDSS
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
*trr
-
*Qrr
-
-
-
V
VGS=0V, ID=250μA
0.6
-
V/°C Reference to 25°C, ID=250μA
-
4.0
V
VDS = VGS, ID=250μA
2.3
-
S
VDS =15V, ID=1A
-
±100
nA V_GS=±30V
-
-
1
10
μA
VDS =600V, VGS =0V
VDS =480V, VGS =0V, Tj=125°C
3.7
4.7
Ω
VGS =10V, ID=1A
9.2
13.8
2.2
-
nC
ID=2A, VDD=480V, VGS=10V
3.6
-
7.2
10.8
8
17
12
25.5
ns
VDD=300V, ID=2A, VGS=10V,
RG=25Ω
9.8
14.7
274
411
36
54
pF
VGS=0V, VDS=25V, f=1MHz
10
15
-
1.5
V
IS=2A, VGS=0V
-
2
A
-
8
422
850
-
-
ns
nC
VGS=0V, IF=2A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTN2N60DJ3
CYStek Product Specification