MTN18N50CF3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C095F3
Issued Date : 2015.09.11
Revised Date :
Page No. : 3/9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
500
-
-
V
VGS=0V, ID=250μA
∆BVDSS/∆Tj
-
0.5
-
V/°C Reference to 25°C, ID=250μA
VGS(th)
2.0
-
4.0
V
VDS = VGS, ID=250μA
*GFS
-
24
-
S
VDS =15V, ID=9A
IGSS
-
-
±100
nA V_GS=±30V
IDSS
-
-
-
-
1
25
μA
VDS =500V, VGS =0V
VDS =400V, VGS =0V, Tj=125°C
*RDS(ON)
-
211
265
mΩ VGS =10V, ID=9A
Dynamic
*Qg
-
70.5
-
*Qgs
-
13.5
-
*Qgd
-
20.9
-
*td(ON)
-
31
-
*tr
-
61
-
*td(OFF)
-
239
-
*tf
-
88
-
Ciss
-
3074
-
Coss
-
281
-
Crss
-
48
-
Source-Drain Diode
nC ID=18A, VDD=400V, VGS=10V
ns
VDD=250V, ID=18A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
*IS
*ISM
*VSD
*trr
*Qrr
-
-
18
A
-
-
72
-
0.84
1.2
V
IS=18A, VGS=0V
-
-
350
4.1
-
-
ns
μC
VGS=0V, IF=18A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN18N50CF3
CYStek Product Specification