MTN18N20FP Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C840FP
Issued Date : 2012.03.30
Revised Date :
Page No. : 3/ 10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
200
∆BVDSS/∆Tj
-
VGS(th)
2.0
*GFS
-
IGSS
-
IDSS
-
IDSS
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
0.2
-
12
-
-
-
0.08
27
6
13
20
66
58
48
1233
154
53
-
-
-
80
240
-
-
4.0
-
±100
10
100
0.12
-
-
-
-
-
-
-
-
-
-
18
72
1.5
-
-
V
V/°C
V
S
nA
μA
Ω
VGS=0, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =20V, ID=9A
VGS=±30
VDS =200V, VGS =0
VDS =160V, VGS =0, Tj=125°C
VGS =10V, ID=9A
nC VDD=160V, ID=18A,VGS=10V
ns
VDD=100V, ID=18A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
IS=18A, VGS=0V
ns
nC
VGS=0, IF=18A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN18N20FP
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTN18N20FP
CYStek Product Specification