MTN10N70FP Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C860FP
Issued Date : 2016.03.07
Revised Date :
Page No. : 3/10
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
1.9
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
700
∆BVDSS/∆Tj
-
VGS(th)
2.0
*GFS
-
IGSS
-
-
IDSS
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
*trr
-
*Qrr
-
-
0.7
-
13
-
-
-
0.66
42
9.5
22
21
10
65.4
12.6
2030
147
25
1
0.79
-
-
450
4.1
-
-
4.0
-
±100
1
10
0.9
-
-
-
-
-
-
-
-
-
-
-
1.5
10
40
-
-
V
V/°C
V
S
nA
μA
Ω
VGS=0V, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=5A
VGS=±30V
VDS =700V, VGS =0V
VDS =560V, VGS =0V, Tj=125°C
VGS =10V, ID=5A
nC ID=10A, VDD=560V, VGS=10V
ns
VDD=350V, ID=10A, VGS=10V,
RG=9.1Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω f=1MHz
V
IS=5A, VGS=0V
A
ns
μC
VGS=0V, IF=10A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN10N70FP
CYStek Product Specification