MTEB4N15I3S Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C874I3S
Issued Date : 2017.01.25
Revised Date :
Page No. : 3/8
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
150
-
2
-
-
V
4
-
-
±100
nA
IDSS
-
-
-
-
1
25
μA
RDS(ON) *1
-
-
253
330
mΩ
265
345
GFS *1
-
3
-
S
Dynamic
Qg *1, 2
-
7.2
-
Qgs *1, 2
-
1.5
-
nC
Qgd *1, 2
-
3
-
td(ON) *1, 2
-
6
-
tr *1, 2
-
8
-
ns
td(OFF) *1, 2
-
8
-
tf *1, 2
-
2
-
Ciss
-
280
-
Coss
-
33
-
pF
Crss
-
12
-
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
6
24
A
VSD *1
-
0.78
1.2
V
trr
-
28
-
ns
Qrr
-
36
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VGS=±30V, VDS=0V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, TJ=125°C
VGS =10V, ID=3A
VGS =6V, ID=2A
VDS =15V, ID=3A
VDS=75V, ID=6A, VGS=10V
VDS=25V, ID=1A, VGS=10V, RG=6Ω
VGS=0V, VDS=25V, f=1MHz
IS=2A, VGS=0V
IF=2A, dIF/dt=100A/μs
MTEB4N15I3S
CYStek Product Specification