MTB1D7N03J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C948J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
Min. Typ. Max.
30
-
-
- 0.03 -
1.2
-
2.5
-
45
-
-
- ±100
Unit
V
V/°C
V
S
nA
Test Conditions
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±20V
IDSS
*RDS(ON)
Dynamic
-
-
-
-
1
10
μA
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=85°C
-
2.0 2.6
mΩ ^{VGS =10V, ID=20A}
-
2.3 3.8
VGS =4.5V, ID=20A
*Qg(VGS=10V) -
*Qg(VGS=4.5V) -
*Qgs
-
*Qgd
-
96 144
49
-
13
-
20
-
nC VDD=15V, ID=15A,VGS=10V
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
-
24
-
- 22.8 -
-
95
-
-
35
-
- 4747 -
-
814
-
-
486
-
-
0.8
-
ns
VDD=15V, ID=1A, VGS=10V, RG=3.3Ω
pF VGS=0V, VDS=15V, f=1MHz
Ω f=1MHz
Source-Drain Diode
*IS
-
*VSD
-
*trr
-
*Qrr
-
-
60
0.78 1.2
27
-
18
-
A
V
IS=20A, VGS=0V
ns
nC
VGS=0, IF=20A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB1D7N03J3
CYStek Product Specification