MTA65N15H8 Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C739H8
Issued Date : 2014.02.11
Revised Date :
Page No. : 3/10
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
150
∆BVDSS/∆Tj
-
VGS(th)
0.4
GFS *1
-
IGSS
-
IDSS
-
-
-
RDS(ON) *1
-
-
Dynamic
Ciss
-
Coss
-
Crss
-
Qg *1, 2
-
Qgs *1, 2
-
Qgd *1, 2
-
td(ON) *1, 2
-
tr *1, 2
-
td(OFF) *1, 2
-
tf *1, 2
-
Source-Drain Diode
IS *1
-
ISM *3
-
VSD *1
-
trr
-
Qrr
-
-
0.12
0.8
48
-
-
-
60
59
60
2282
120
66
30
4.8
16
23
22
91
63
-
-
0.85
50
120
-
-
1.5
-
±100
1
25
75
75
78
-
-
-
-
-
-
-
-
-
-
20
60
1.3
-
-
V
V/°C
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=10A
VGS=±16V
VDS =120V, VGS =0V
VDS =100V, VGS =0V, Tj=125°C
VGS =10V, ID=15A
VGS =5V, ID=10A
VGS =3V, ID=3A
pF
VGS=0V, VDS=25V, f=1MHz
nC
ID=10A, VDS=80V, VGS=5V
ns
VDS=75V, ID=1A, VGS=4.5V, RG=6Ω
A
V IS=20A, VGS=0V
ns _{IF=20A, dIF/dt=100A/μs}
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTA65N15H8
CYStek Product Specification