DAN217S6R Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – High –speed multi-chip diode

CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C328S6
Issued Date : 2009.11.23
Revised Date :
Page No. : 3/6
Power Derating Curve
250
See Note 1 on page 1
200
150
100
50
Per package
0
0
25 50 75 100 125 150
Ambient Temperature---TA(℃)
Reverse Leakage Current vs Reverse Voltage
100
Per element
10
T a= 150℃
1
T a= 125℃
0.1
Ta=85℃
Ta=55℃
0.01
0.001
T a= 25℃
0
10
20
30
40
50
Reverse Voltage---VR(V)
Forward Current vs Forward Voltage
1000
Per element
100
T a=85℃
10
T a= 25℃
1
T a=- 40℃
0.1
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage---VF(V)
Capacitance vs Reverse Voltage
0.68
0.64
Per element
0.6
f=1MHz
Ta=25℃
0.56
0.52
0.48
0.44
0.4
0 2 4 6 8 10 12 14 16
Reverse Voltage---VR(V)
DAN217S6R
CYStek Product Specification