BTD1857AE3 Datasheet, PDF (3/4 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C855E3
Issued Date : 2004.08.06
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Tj=125℃
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Tj=25℃
Tj=75℃
10
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
Tj=25℃
100
Tj=125℃
10
10
Tj=25℃
Tj=75℃
100
1000
Collector Current---IC(mA)
On Voltage vs Collector Current
1000
Tj=25℃
10000
Tj=75℃
Tj=125℃
Tj=75℃
Tj=125℃
100
1
VBE(SAT)@IC=10IB
10
100
1000
Collector Current---IC(mA)
Power Derating Curve
2.5
2
1.5
1
0.5
0
0
BTD1857AE3
50
100
150
Ambient Temperature---TA(℃)
10000
200
100
1
VBE(ON)@VCE=5V
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
25
20
15
10
5
0
0
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification