BTD1304N3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 3/8
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2mA
1.5mA
1mA
IB= 500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
2
20mA
1.5
6mA
4mA
1
IB=2mA
0.5
Emitter Grounded Output Characteristics
2.5
50mA
2
20mA
1.5
10mA
IB=5mA
1
0.5
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
125℃
Current Gain vs Collector Current
1000
125℃
75℃
25℃
-25℃
75℃
25℃
-25℃
VCE=1V
100
VCE=2V
100
10
100
1000
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
BTD1304N3
CYStek Product Specification