BTC5658Y3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C204Y3
Issued Date : 2011.11.03
Revised Date :
Page No. : 3/7
Typical Characteristics
Emitter Grounded Output Characteristics
0.14
1mA
0.12
0.1
500uA
400uA
0.08
300uA
0.06
200uA
0.04
IB=100uA
0.02
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
1.5mA
IB=0.5mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
150°C
VCE=6V
Saturation Voltage vs Collector Current
1000
VCESAT@IC=10IB
100
-55°C
25°C
150°C
100
10
1
10
100
Collector Current---IC(mA)
-55℃
25°C
10
1000
1
10
100
1000
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
150℃
25°C
-55°C
100
FT@VCE=12V
100
1
VBESAT@IC=10IB
10
10
100
1000
Collector Current---IC(mA)
0.1
1
10
100
Collector Current --- IC(mA)
BTC5658Y3
CYStek Product Specification