BTB718N3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C240N3
Issued Date : 2013.02.19
Revised Date :
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
0.3
0.25
1mA
0.2
0.15
0.1
0.05
0
0
500uA
400uA
300uA
200uA
-IB=100uA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
-IB=500uA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
Emitter Grounded Output Characteristics
6
50mA
5
4
25mA
20mA
3
15mA
2
10mA
1
-IB=5mA
0
0
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1000
-IC, Collector Current(mA)
10000
BTB718N3
CYStek Product Specification