BTB1424FP Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – Low VCE(sat) PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C817FP
Issued Date : 2011.01.13
Revised Date : 2011.09.14
Page No. : 3/6
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
4
20mA
3
10mA
2
8mA
6mA
1
4mA
IB=2mA
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
6
50mA
5
4
20mA
3
15mA
10mA
2
1
IB=5mA
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
VCE=5V
10000
Saturation Voltage vs Collector Current
VCESAT
100
10
1
VCE=2V
VCE=1V
10
100
1000
Collector Current---IC(mA)
1000
IC=150IB
100
IC=100IB
IC=50IB
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
BTB1424FP
CYStek Product Specification