TIP31CJ3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – 3A NPN Epitaxial Planar Power Transistor

CYStech Electronics Corp.
Spec. No. : C609J3
Issued Date : 2014.06.06
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction and Storage Temperature Range
Note : 1. Single Pulse , Pw≦300μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj ; Tstg
Limits
200
100
5
3
5 (Note 1)
1
1.56
15
80
8.3
-65~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
Characteristics (Ta=25°C)
Symbol
*BVCEO(SUS)
ICBO
ICEO
ICES
IEBO
*VCE(sat)
*VBE(on)
*hFE
*hFE
fT
Min.
100
-
-
-
-
-
-
25
10
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
100
1
1
100
0.5
1.2
-
50
-
Unit
V
nA
μA
μA
nA
V
V
-
-
MHz
Test Conditions
IC=30mA, IB=0
VCB=200V, IC=0
VCE=100V, IB=0
VCE=100V, VBE=0
VEB=5V, IC=0
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=4V, IC=1A
VCE=4V, IC=3A
VCE=10V, IC=500mA, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Recommended soldering footprint
TIP31CJ3
CYStek Product Specification