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SKM2050USP Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – 20Amp. MOS BARRIER RECTIFIER | |||
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CYStech Electronics Corp.
Spec. No. : K176SP
Issued Date : 2014.12.27
Revised Date : 2014.12.27
Page No. : 2/6
Maximum Ratings and Electrical Characteristics
(Rating at 25ï°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Maximum DC blocking voltage
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum instantaneous forward voltage TC=25°C
at IF=20A
TC=125°C
Maximum instantaneous VR=50 V, TC=25â
reverse current at
VR=50 V, TC=125â
Maximum Average forward rectified current @ TC=100â
Non-repetitive peak forward surge current @
8.3ms single half sine wave superimposed on
rated load (JEDEC method)
Symbol Min. Typ.
VDC
VRRM
VRMS
VF
0.49
0.45
IR
130
45
IF(AV)
Max.
50
50
36
0.55
0.5
500
100
20
Units
V
V
V
V
μA
mA
A
IFSM
320 A
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Maximum Rate of Voltage Change ( at Rated VR )
Storage temperature range
Operating junction temperature range
IRRM
dv/dt
Tstg -55
TJ -55
2
10000
150
150
A
V/uS
â
â
Thermal Data
Parameter
Symbol
Value
Maximum Thermal Resistance, Junction-to-ambient(1)
Rth,j-a
75
Maximum Thermal Resistance, Junction-to-ambient(2)
Rth,j-a
32
Note
1. FR-4 PCB, 2oz. Copper. Minimum recommended pad layout.
2. FR-4 PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions 5.6mm x 14.4mm
Unit
ï°C/W
ï°C/W
SKM2050USP
CYStek Product Specification
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