SKM1045USP Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – 10Amp. MOS BARRIER RECTIFIER

CYStech Electronics Corp.
Spec. No. : K180SP
Issued Date : 2014.09.12
Revised Date : 2014.10.03
Page No. : 2/6
Maximum Ratings and Electrical Characteristics
(Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Maximum DC blocking voltage
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum instantaneous forward voltage ^TC=25°C
at IF=10A
TC=125°C
Maximum instantaneous VR=45 V, TC=25℃
reverse current at
VR=45 V, TC=125℃
Maximum Average forward rectified current @ TC=100℃
Non-repetitive peak forward surge current @
8.3ms single half sine wave superimposed on
rated load (JEDEC method)
Symbol
VDC
VRRM
VRMS
VF
IR
IF(AV)
Min.
Typ.
0.44
0.39
80
20
Max.
45
45
32
0.47
0.42
300
50
10
Units
V
V
V
V
μA
mA
A
IFSM
250 A
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Maximum Rate of Voltage Change ( at Rated VR )
Storage temperature range
Operating junction temperature range
IRRM
dv/dt
Tstg -55
TJ -55
2
10000
150
150
A
V/uS
℃
℃
Thermal Data
Parameter
Symbol
Value
Maximum Thermal Resistance, Junction-to-ambient(1)
Rth,j-a
73
Maximum Thermal Resistance, Junction-to-ambient(2)
Rth,j-a
31
Note
1. FR-4 PCB, 2oz. Copper. Minimum recommended pad layout.
2. Polymide PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions 5.6mm x 14.4mm
Unit
C/W
C/W
SKM1045USP
CYStek Product Specification