MTP9435BDYQ8 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Note : 1.Surface mounted on FR-4 board, t≤10sec.
2.Pulse width ≤300μs, Duty Cycle≤2%
Symbol
BVDSS
VGS
ID
IDM
Pd
Tj
Tstg
Rth,j-a
Limits
-30
±20
-5.3
-24
2.5
0.02
-55~+150
-55~+150
50
Unit
V
V
A
A
W
W / °C
°C
°C
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
-30
VGS(th)
-1
IGSS
-
IDSS
-
-
*RDS(ON)
-
-
-
V VGS=0, ID=-250μA
-
-2.5
V VDS=VGS, ID=-250μA
-
±100 nA VGS=±20V, VDS=0
-
-1
μA VDS=-30V, VGS=0
-
-
36
55
mΩ
ID=-5.3A, VGS=-10V
ID=-4.2A, VGS=-4.5V
*GFS
-
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Source Drain Diode
*VSD
-
5
-
582
-
125
-
86
-
9
-
10
-
37
-
23
-
11.7
-
2.1
-
2.9
-
-0.84 -1.2
S VDS=-5V, ID=-5.3A
pF VDS=-15V, VGS=0, f=1MHz
ns
VDD=-15V, ID=-1A,
VGS=-10V, RG=6Ω, RD=15Ω
nC VDS=-15V, VGS=-10V, ID=-5.3A
V VGS=0V, IS=-1.7A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP9435BDYQ8
CYStek Product Specification